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Opt Express. 2011 Jul 18;19(15):14690-5. doi: 10.1364/OE.19.014690.

Ten Gbit/s ring resonator silicon modulator based on interdigitated PN junctions.

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  • 1Institut d’Electronique Fondamentale, Univ Paris-Sud, CNRS, Bât 220, F-91405 Orsay France.


10 Gbit/s silicon modulator based on carrier depletion in interdigitated PN junctions is experimentally demonstrated. The phase-shifter is integrated in a ring resonator, and high extinction ratio larger than 10 dB is obtained in both TE and TM polarizations. VπLπ of about 2.5 V × cm and optical loss lower than 1 dB are estimated. 10 Gbit/s data transmission is demonstrated with an extinction ratio of 4 dB.

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