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Small. 2011 Oct 17;7(20):2899-905. doi: 10.1002/smll.201101157. Epub 2011 Aug 23.

Resistive-switching crossbar memory based on Ni-NiO core-shell nanowires.

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  • 1Dipartimento di Elettronica e Informazione, Politecnico di Milano Piazza L. da Vinci 32, Milan, Italy.

Abstract

Resistive-switching memory (RRAM) is an emerging nanoscale device based on the localized metal-insulator transition within a few-nanometer-sized metal oxide region. RRAM is one of the most promising memory technologies for the ultimate downscaling of nonvolatile memory. However, to develop memory arrays with densities approaching 1 Tb cm(-2) , bottom-up schemes based on synthesis and assembly of metal oxide nanowires (NWs) must be demonstrated. A RRAM memory device based on core-shell Ni-NiO NWs is presented, in which the Ni core plays the role of the metallic interconnect, while the NiO shell serves as the active switching layer. A resistance change of at least two orders of magnitude is shown on electrical operation of the device, and the metal-insulator switching is unequivocally demonstrated to take place in the NiO shell at the crossing between two NWs or between a NW and a gold electrode strip. Since the fabrication of the NW crossbar device is not limited by lithography, this approach may provide a basis for high-density, low-cost crossbar memory with long-term storage stability.

Copyright © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

[PubMed - indexed for MEDLINE]
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