Send to:

Choose Destination
See comment in PubMed Commons below
Nanotechnology. 2008 Nov 5;19(44):445709. doi: 10.1088/0957-4484/19/44/445709. Epub 2008 Sep 30.

The BN-pair impurity in carbon nanotubes and the possibility for disorder-induced frustration of gap formation.

Author information

  • 1Departament d'Enginyeria Electrònica, Universitat Autònoma de Barcelona, E-08193 Bellaterra, Barcelona, Catalonia, Spain.


We study the BN-pair impurity complex inside a metallic and a semiconducting single-walled carbon nanotube host. For the single impurity in the semiconducting tube, we find that no electron or hole bound states can be sustained because the distance between the B and the N is less than the effective Fermi-Teller radius for that system. If the BN pairs are incorporated at stoichiometric concentrations (BC(10)N nanotubes), achievable for example with a borabenzene-pyridine adduct C(10)H(10)BN precursor, the metallic tube becomes semiconducting for an ordered arrangement of the impurities, but the introduction of disorder restores a finite density of states at the Fermi level. Thus, in the mechanism presented here, disorder effectively restores the symmetry of the nanotube, returning the nanotube to its original metallic character.

PubMed Commons home

PubMed Commons

How to join PubMed Commons

    Supplemental Content

    Full text links

    Icon for IOP Publishing Ltd.
    Loading ...
    Write to the Help Desk