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ACS Nano. 2011 Sep 27;5(9):7117-23. doi: 10.1021/nn202524j. Epub 2011 Aug 17.

Joule-assisted silicidation for short-channel silicon nanowire devices.

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  • 1SPSMS/LaTEQS, CEA-INAC/UJF-Grenoble 1, 17 Rue des Martyrs, 38054 Grenoble Cedex 9, France.


We report on a technique enabling electrical control of the contact silicidation process in silicon nanowire devices. Undoped silicon nanowires were contacted by pairs of nickel electrodes, and each contact was selectively silicided by means of the Joule effect. By a real-time monitoring of the nanowire electrical resistance during the contact silicidation process we were able to fabricate nickel-silicide/silicon/nickel-silicide devices with controlled silicon channel length down to 8 nm.

© 2011 American Chemical Society

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