Send to:

Choose Destination
See comment in PubMed Commons below
Nanotechnology. 2008 Aug 20;19(33):335603. doi: 10.1088/0957-4484/19/33/335603. Epub 2008 Jul 7.

Growth of one-dimensional Si/SiGe heterostructures by thermal CVD.

Author information

  • 1CEA, LITEN, DTNM, LCH, 38054 Grenoble, France.


The first results on a simple new process for the direct fabrication of one-dimensional superlattices using common CVD chambers are presented. The experiments were carried out in a 200 mm industrial Centura reactor (Applied Materials). Low dimensionality and superlattices allow a significant increase in the figure of merit of thermoelectrics by controlling the transport of phonons and electrons. The monocrystalline nanowires produced according to this process are both one-dimensional and present heterostructures, with very thin layers (40 nm) of Si and SiGe. Concentrations up to 30 at.% Ge were obtained in the SiGe parts. Complementary techniques including transmission electronic microscopy (TEM), selected area electron diffraction (SAED), energy dispersive x-ray spectroscopy (EDS), scanning transmission electron microscopy (STEM) in bright field and high angle annular dark field (HAADF STEM), and energy-filtered transmission electron microscopy (EF-TEM) were used to characterize the nanoheterostructures.

PubMed Commons home

PubMed Commons

How to join PubMed Commons

    Supplemental Content

    Full text links

    Icon for IOP Publishing Ltd.
    Loading ...
    Write to the Help Desk