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Nanotechnology. 2008 Aug 20;19(33):335603. doi: 10.1088/0957-4484/19/33/335603. Epub 2008 Jul 7.

Growth of one-dimensional Si/SiGe heterostructures by thermal CVD.

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  • 1CEA, LITEN, DTNM, LCH, 38054 Grenoble, France.

Abstract

The first results on a simple new process for the direct fabrication of one-dimensional superlattices using common CVD chambers are presented. The experiments were carried out in a 200 mm industrial Centura reactor (Applied Materials). Low dimensionality and superlattices allow a significant increase in the figure of merit of thermoelectrics by controlling the transport of phonons and electrons. The monocrystalline nanowires produced according to this process are both one-dimensional and present heterostructures, with very thin layers (40 nm) of Si and SiGe. Concentrations up to 30 at.% Ge were obtained in the SiGe parts. Complementary techniques including transmission electronic microscopy (TEM), selected area electron diffraction (SAED), energy dispersive x-ray spectroscopy (EDS), scanning transmission electron microscopy (STEM) in bright field and high angle annular dark field (HAADF STEM), and energy-filtered transmission electron microscopy (EF-TEM) were used to characterize the nanoheterostructures.

PMID:
21730625
[PubMed]
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