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    Phys Rev Lett. 2011 Feb 11;106(6):066602. Epub 2011 Feb 11.

    Ultrafast strain-induced current in a GaAs Schottky diode.

    Source

    School of Physics and Astronomy, University of Nottingham, University Park, Nottingham NG7 2RD, United Kingdom.

    Abstract

    Picosecond acoustic pulses generated by femtosecond laser excitation of a metal film induce a transient current with subnanosecond rise time in a GaAs/Au Schottky diode. The signal consists of components due to the strain pulse crossing the edge of the depletion layer in the GaAs and also the GaAs/Au interface. A theoretical model is presented for the former and is shown to be in very good agreement with the experiment.

    PMID:
    21405483
    [PubMed - indexed for MEDLINE]

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