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Nanoscale. 2011 Apr;3(4):1485-8. doi: 10.1039/c0nr00973c. Epub 2011 Mar 8.

Near infrared broadband emission of In0.35Ga0.65As quantum dots on high index GaAs surfaces.

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  • 1Arkansas Institute of Nanoscale Materials Science and Engineering, University of Arkansas, Fayetteville, AR 72701, USA.


The morphology and optical properties of In(0.35)Ga(0.65)As/GaAs quantum dots (QDs) grown on (210), (311)A, (711)A, (731) and (100) substrates are investigated. QDs formed on (210) and (731) oriented substrates are grown by molecular beam epitaxy. Regular QDs are observed on (100), (311)A, and (711)A. Randomly distributed QDs and comet-shaped QDs form on (210) and (731) substrates, respectively. A high density of QDs on the order of 10(11) cm(-2) are obtained from (711)A. The optical measurement shows a spectrum linewidth (FWHM = 74.3 nm) of QDs on GaAs (210) three times wider than GaAs (100) substrate. Long exciton decay times, over 1 ns, are also measured by time-resolved photoluminescence technique for all samples. Our results demonstrate the potential for QDs on GaAs high index substrates for wideband applications.

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