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Opt Express. 2011 Jan 17;19(2):1665-79. doi: 10.1364/OE.19.001665.

Scintillation induced response in passively-quenched Si-based single photon counting avalanche diode arrays.

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  • 1Molecular Imaging Program at Stanford (MIPS), Radiology Department, Stanford University School of Medicine, Stanford, California, USA.


An optical electrical model which studies the response of Si-based single photon counting arrays, specifically silicon photomultipliers (SiPMs), to scintillation light has been developed and validated with analytically derived and experimental data. The scintillator-photodetector response in terms of relative pulse height, 10%-90% rise/decay times to light stimuli of different rise times (ranging from 0.1 to 5 ns) and decay times (ranging from 1 to 50 ns), as well as for different decay times of the photodetector are compared in theory and simulation. A measured detector response is used as a reference to further validate the model and the results show a mean deviation of simulated over measured values of 1%.

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