Display Settings:

Format

Send to:

Choose Destination
See comment in PubMed Commons below
ACS Appl Mater Interfaces. 2010 Dec;2(12):3539-43. doi: 10.1021/am100712h. Epub 2010 Dec 1.

Rectifying properties of p-GaN nanowires and an n-silicon heterojunction vertical diode.

Author information

  • 1Department of Materials Science, Indian Association for the Cultivation of Science, Jadavpur, Kolkata 700 032, India.

Abstract

The heterojunction of a Pd-doped p-GaN nanowire and n-Si (100) is fabricated vertically by the vapor-liquid-solid method. The average diameter of the nanowire is 40 nm. The vertical junction reveals a significantly high rectification ratio of 10(3) at 5 V, a moderate ideality factor of ∼2, and a high breakdown voltage of ∼40 V. The charge transport across the p-n junction is dominated by the electron-hole recombination process. The voltage dependence of capacitance indicates a graded-type junction. The resistance of the junction decreases with an increase in the bias voltage confirmed by impedance measurements.

PMID:
21121615
[PubMed - indexed for MEDLINE]
PubMed Commons home

PubMed Commons

0 comments
How to join PubMed Commons

    Supplemental Content

    Icon for American Chemical Society
    Write to the Help Desk