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Phys Chem Chem Phys. 2011 Jan 21;13(3):985-90. doi: 10.1039/c0cp01313g. Epub 2010 Nov 9.

Enhanced field emission property of a novel Al2O3 nanoparticle-decorated tubular SiC emitter with low turn-on and threshold field.

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  • 1State Key Laboratory of Optoelectronic Materials and Technologies, Institute of Optoelectronic and Functional Composite Materials, School of Physics Science & Engineering, Zhongshan University, Guangzhou 510275, China.


We report a novel Al(2)O(3) nanoparticle-decorated tubular SiC nanostructure, which shows a remarkable enhanced field emission property with low turn-on and threshold field. The formation of Al(2)O(3) nanoparticle-decorated tubular SiC on Si substrates is achieved in one-step via simple heating evaporation process for the first time. The nanostructure consists of tubular SiC and the Al(2)O(3) nanoparticles, which homogeneously decorate on the surface of the tubular SiC with an average diameter of 7.8 nm and narrow diameter distribution. Moreover, compared with the same density and sized bare tubular SiC, the Al(2)O(3) nanoparticle-decorated tubular SiC nanostructure has an obvious reduction in turn-on (from 8.8 to 2.4 V μm(-1)) and threshold field (from 23.5 to 5.37 V μm(-1)). The very low turn-on and threshold field is also comparable to that of carbon nanotubes, which indicates the Al(2)O(3) nanoparticle-decorated tubular SiC is of huge potential application in future field emission display devices.

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