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Opt Express. 2010 Aug 30;18(18):19064-9. doi: 10.1364/OE.18.019064.

High speed silicon optical modulator with self aligned fabrication process.

Author information

  • 1Advanced Technology Institute, University of Surrey, Guildford, Surrey, UK. d.thomson@surrey.ac.uk

Abstract

With the imminent commercialisation of silicon photonic devices comes the requirement for a fabrication process capable of high yield and device performance repeatability. The precise alignment of the different elements of a device can be a major fabrication challenge for minimising performance variation or even device failure. In this paper a new design of high speed carrier depletion silicon optical modulator is introduced which features the use of a self-aligned fabrication process to form the pn junction. Experimental results are presented from an initial fabrication run, which has demonstrated a 6 dB modulation depth at 10 Gbit/s from a 3.5 m long device.

PMID:
20940800
[PubMed]
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