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Opt Lett. 2010 Jan 1;35(1):73-5. doi: 10.1364/OL.35.000073.

Integrated Al2O3:Er3+ ring lasers on silicon with wide wavelength selectivity.

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  • 1Integrated Optical Microsystems Group, MESA+ Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500 AE Enschede, The Netherlands.


Integrated Al(2)O(3):Er(3+) channel waveguide ring lasers were realized on thermally oxidized silicon substrates. High pump power coupling into and low laser output power coupling from the ring is achieved in a straightforward design. Output powers of up to 9.5 microW and slope efficiencies of up to 0.11% were measured while lasing was observed for a threshold diode-pump power as low as 6.4 mW for ring lasers with cavity lengths varying from 2.0 to 5.5 cm. Wavelength selection in the range 1530-1557 nm was demonstrated by varying the length of the output coupler from the ring.

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