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Opt Express. 2010 Mar 29;18(7):7055-63. doi: 10.1364/OE.18.007055.

Effects of intermixing on modulation p-doped quantum dot superluminescent light emitting diodes.

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  • 1Department of Electronic and Electrical Engineering, University of Sheffield, Sir Frederick Mappin Building, Mappin Street, Sheffield, S1 3JD, UK. ziyang.zhang@shef.ac.uk


Different capping of quantum dot (QD) materials is known to produce different degrees of intermixing during a post-growth thermal annealing process. We report a study of the effect of different degrees of intermixing on modulation beryllium doped quantum dot superluminescent light emitting diodes (QD-SLEDs). The intermixed QD-SLEDs show high device performance whilst achieving a large central emission wavelength shift of approximately 100nm compared to the as-grown device. The evolution of the emission spectra and power with drive current suggest a transition from QD-like to QW-like behavior with increasing degree of intermixing. A selective area intermixed QD-SLED is demonstrated, and with optimized differential intermixing, such structures should allow ultra-broadband sources to be realized.

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