Send to:

Choose Destination
See comment in PubMed Commons below
Nano Lett. 2010 May 12;10(5):1917-21. doi: 10.1021/nl100840z.

Top-gated graphene nanoribbon transistors with ultrathin high-k dielectrics.

Author information

  • 1Department of Chemistry and Biochemistry, University of California, Los Angeles, California 90095, USA.


The integration ultrathin high dielectric constant (high-k) materials with graphene nanoribbons (GNRs) for top-gated transistors can push their performance limit for nanoscale electronics. Here we report the assembly of Si/HfO(2) core/shell nanowires on top of individual GNRs as the top-gates for GNR field-effect transistors with ultrathin high-k dielectrics. The Si/HfO(2) core/shell nanowires are synthesized by atomic layer deposition of the HfO(2) shell on highly doped silicon nanowires with a precise control of the dielectric thickness down to 1-2 nm. Using the core/shell nanowires as the top-gates, high-performance GNR transistors have been achieved with transconductance reaching 3.2 mS microm(-1), the highest value for GNR transistors reported to date. This method, for the first time, demonstrates the effective integration of ultrathin high-k dielectrics with graphene with precisely controlled thickness and quality, representing an important step toward high-performance graphene electronics.

[PubMed - indexed for MEDLINE]
Free PMC Article
PubMed Commons home

PubMed Commons

How to join PubMed Commons

    Supplemental Content

    Full text links

    Icon for American Chemical Society Icon for PubMed Central
    Loading ...
    Write to the Help Desk