Format

Send to:

Choose Destination
See comment in PubMed Commons below
Nano Lett. 2010 Apr 14;10(4):1512-6. doi: 10.1021/nl100217k.

Intersublevel infrared photodetector with strain-free GaAs quantum dot pairs grown by high-temperature droplet epitaxy.

Author information

  • 1Department of Electrical Engineering, University of Arkansas, Fayetteville, Arkansas 72701, USA.

Abstract

Normal incident photodetection at mid infrared spectral region is achieved using the intersublevel transitions from strain-free GaAs quantum dot pairs in Al(0.3)Ga(0.7)As matrix. The GaAs quantum dot pairs are fabricated by high temperature droplet epitaxy, through which zero strain quantum dot pairs are obtained from lattice matched materials. Photoluminescence, photoluminescence excitation optical spectroscopy, and visible-near-infrared photoconductivity measurement are carried out to study the electronic structure of the photodetector. Due to the intersublevel transitions from GaAs quantum dot pairs, a broadband photoresponse spectrum is observed from 3 to 8 microm with a full width at half-maximum of approximately 2.0 microm.

PMID:
20356102
[PubMed - indexed for MEDLINE]
PubMed Commons home

PubMed Commons

0 comments
How to join PubMed Commons

    Supplemental Content

    Full text links

    Icon for American Chemical Society
    Loading ...
    Write to the Help Desk