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Adv Mater. 2010 Jan 12;22(2):219-48. doi: 10.1002/adma.200901867.

Epitaxial growth and properties of doped transition metal and complex oxide films.

Author information

  • Chemical and Materials Science Division, Fundamental and Computational Sciences Directorate, Pacific Northwest National Laboratory, PO Box 999, MS K8-87, Richland, WA 99352, USA. sa.chambers@pnl.gov

Abstract

The detailed science and technology of crystalline oxide film growth using vacuum methods is reviewed and discussed with an eye toward gaining fundamental insights into the relationships between growth process and parameters, film and interface structure and composition, and electronic, magnetic and photochemical properties. The topic is approached first from a comparative point of view based on the most widely used growth methods, and then on the basis of specific material systems that have generated very high levels of interest. Emphasis is placed on the wide diversity of structural, electronic, optical and magnetic properties exhibited by oxides, and the fascinating results that this diversity of properties can produce when combined with the degrees of freedom afforded by heteroepitaxy.

PMID:
20217685
[PubMed - indexed for MEDLINE]
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