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Opt Express. 2010 Jan 18;18(2):1450-61. doi: 10.1364/OE.18.001450.

All-optical switching in silicon-on-insulator photonic wire nano-cavities.

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  • 1Dipartimento di Fisica A. Volta and UdR CNISM, Universit√† degli Studi di Pavia, Via Bassi 6, Pavia, Italy.


We report on experimental demonstration of all-optical switching in a silicon-on-insulator photonic wire nanocavity operating at telecom wavelengths. The switching is performed with a control pulse energy as low as approximately 0.1 pJ on a cavity device that presents very high signal transmission, an ultra-high quality-factor, almost diffraction-limited modal volume and a footprint of only 5 microm(2). High-speed modulation of the cavity mode is achieved by means of optical injection of free carriers using a nanosecond pulsed laser. Experimental results are interpreted by means of finite-difference time-domain simulations. The possibility of using this device as a logic gate is also demonstrated.

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