Electroluminescence from silicon-based photonic crystal microcavities with PbSe quantum dots

Opt Lett. 2010 Feb 15;35(4):547-9. doi: 10.1364/OL.35.000547.

Abstract

The characteristics of electrically injected silicon-based photonic crystal microcavities with PbSe quantum dots are described. The device includes suitable electron and hole transporting layers and contact layers. The measured electroluminescence at room temperature exhibits an enhanced spontaneous emission. The resonant mode is observed at lambda=1669 nm with a spectral linewidth of 4 nm, corresponding to a cavity Q factor of approximately 420.