Display Settings:

Format

Send to:

Choose Destination
See comment in PubMed Commons below
Science. 2010 Feb 5;327(5966):662. doi: 10.1126/science.1184289.

100-GHz transistors from wafer-scale epitaxial graphene.

Author information

  • 1IBM T. J. Watson Research Center, Yorktown Heights, NY 10598, USA. yming@us.ibm.com

Abstract

The high carrier mobility of graphene has been exploited in field-effect transistors that operate at high frequencies. Transistors were fabricated on epitaxial graphene synthesized on the silicon face of a silicon carbide wafer, achieving a cutoff frequency of 100 gigahertz for a gate length of 240 nanometers. The high-frequency performance of these epitaxial graphene transistors exceeds that of state-of-the-art silicon transistors of the same gate length.

PMID:
20133565
[PubMed]
Free full text
PubMed Commons home

PubMed Commons

0 comments
How to join PubMed Commons

    Supplemental Content

    Full text links

    Icon for HighWire
    Loading ...
    Write to the Help Desk