Science. 2010 Feb 5;327(5966):662. doi: 10.1126/science.1184289.

100-GHz transistors from wafer-scale epitaxial graphene.

Lin YM, Dimitrakopoulos C, Jenkins KA, Farmer DB, Chiu HY, Grill A, Avouris P.

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IBM T. J. Watson Research Center, Yorktown Heights, NY 10598, USA. yming@us.ibm.com

Abstract

The high carrier mobility of graphene has been exploited in field-effect transistors that operate at high frequencies. Transistors were fabricated on epitaxial graphene synthesized on the silicon face of a silicon carbide wafer, achieving a cutoff frequency of 100 gigahertz for a gate length of 240 nanometers. The high-frequency performance of these epitaxial graphene transistors exceeds that of state-of-the-art silicon transistors of the same gate length.

PMID:: 20133565; [PubMed]

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100-GHz transistors from wafer-scale epitaxial graphene.
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