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Opt Lett. 2010 Jan 15;35(2):184-6. doi: 10.1364/OL.35.000184.

Subsurface microscopy of interconnect layers of an integrated circuit.

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  • 1Department of Electrical and Computer Engineering and the Photonics Center, Boston University, Boston, Massachusetts 02215, USA.


We apply the NA-increasing lens technique to confocal and wide-field backside microscopy of integrated circuits. We demonstrate 325 nm (lambda(0)/4) lateral spatial resolution while imaging metal structures located inside the interconnect layer of an integrated circuit. Vectorial field calculations are presented justifying our findings.

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