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Lab Chip. 2009 Oct 7;9(19):2789-95. doi: 10.1039/b906048k. Epub 2009 Aug 6.

Localized heating on silicon field effect transistors: device fabrication and temperature measurements in fluid.

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  • 1Birck Nanotechnology Center, Purdue University, West Lafayette, IN 47907, USA.


We demonstrate electrically addressable localized heating in fluid at the dielectric surface of silicon-on-insulator field-effect transistors via radio-frequency Joule heating of mobile ions in the Debye layer. Measurement of fluid temperatures in close vicinity to surfaces poses a challenge due to the localized nature of the temperature profile. To address this, we developed a localized thermometry technique based on the fluorescence decay rate of covalently attached fluorophores to extract the temperature within 2 nm of any oxide surface. We demonstrate precise spatial control of voltage dependent temperature profiles on the transistor surfaces. Our results introduce a new dimension to present sensing systems by enabling dual purpose silicon transistor-heaters that serve both as field effect sensors as well as temperature controllers that could perform localized bio-chemical reactions in Lab on Chip applications.

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