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Nanotechnology. 2010 Jan 8;21(1):015204. doi: 10.1088/0957-4484/21/1/015204. Epub 2009 Nov 30.

Electroluminescence from a single InGaN quantum dot in the green spectral region up to 150 K.

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  • 1Institute of Solid State Physics, Semiconductor Optics, University of Bremen, PO Box 330 440, 28334 Bremen, Germany.


We present electrically driven luminescence from single InGaN quantum dots embedded into a light emitting diode structure grown by metal-organic vapor-phase epitaxy. Single sharp emission lines in the green spectral region can be identified. Temperature dependent measurements demonstrate thermal stability of the emission of a single quantum dot up to 150 K. These results are an important step towards applications like electrically driven single-photon emitters, which are a basis for applications incorporating plastic optical fibers as well as for modern concepts of free space quantum cryptography.

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