Abstract

Electrical properties of single ZnO nanobelt have been examined by fabricating single nanobelt based field effect transistors (FETs). The ZnO nanobelts were grown via non-catalytic simple thermal evaporation process by using metallic zinc powder in the presence of oxygen. The detailed structural and optical characterizations confirmed that the grown nanobelts are well-crystalline with the wurtzite hexagonal phase and exhibiting good optical properties. The passivation effect on the electrical characteristics of the as-grown nanobelts was also evaluated by passivating the fabricated FETs with polymethyl methacrylate (PMMA). The passivated single ZnO nanobelt based FETs exhibited higher electrical performance as compared to non-passivated FETs due to reduction in the physically absorbed chemisorbed species such as O-, O2-, O2, or OH- etc. The field effect mobility (micro(eff)) of the fabricated nanobelt based non-passivated and passivated FETs was estimated to be approximately 21.3 and 59 cm2/V x s, respectively. Moreover the carrier concentration and peak transconductance of the fabricated non-passivated and passivated FET were calculated to be approximately 8.73 x 10(17) and approximately 1.86 x 10(18) cm(-3) and approximately 0.76 and 1.4 microS, respectively. This work offers substantial opportunities for further practical electronics and photonics nanodevice applications of ZnO based nanostructures.