Display Settings:

Format

Send to:

Choose Destination
Nano Lett. 2009 Dec;9(12):4474-8. doi: 10.1021/nl902788u.

Utilization of a buffered dielectric to achieve high field-effect carrier mobility in graphene transistors.

Author information

  • 1IBM TJ Watson Research Center, Yorktown Heights, New York 10598, USA. dfarmer@us.ibm.com

Abstract

We utilize an organic polymer buffer layer between graphene and conventional gate dielectrics in top-gated graphene transistors. Unlike other insulators, this dielectric stack does not significantly degrade carrier mobility, allowing for high field-effect mobilities to be retained in top-gate operation. This is demonstrated in both two-point and four-point analysis and in the high-frequency operation of a graphene transistor. Temperature dependence of the carrier mobility suggests that phonons are the dominant scatterers in these devices.

PMID:
19883119
[PubMed - indexed for MEDLINE]
PubMed Commons home

PubMed Commons

0 comments
How to join PubMed Commons

    Supplemental Content

    Full text links

    Icon for American Chemical Society
    Loading ...
    Write to the Help Desk