Opt Express. 2007 Jun 11;15(12):7551-6.

Continuous-wave operation of photonic band-edge laser near 1.55 microm on silicon wafer.

Vecchi G, Raineri F, Sagnes I, Yacomotti A, Monnier P, Karle TJ, Lee KH, Braive R, Le Gratiet L, Guilet S, Beaudoin G, Taneau A, Bouchoule S, Levenson A, Raj R.

Abstract

We report on the continuous-wave operation of a band edge laser at room temperature near 1.55 mum in an InGaAs/InP photonic crystal. A flat dispersion band-edge photonic mode is used for surface normal operation. The photonic crystal slab is integrated onto a Silicon chip by means of Au/In bonding technology, which combines two advantages, efficient heat sinking and broad band reflectivity.

PMID:: 19547080; [PubMed - in process]

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Continuous-wave operation of photonic band-edge laser near 1.55 microm on silico...
Continuous-wave operation of photonic band-edge laser near 1.55 microm on silicon wafer.
Opt Express. 2007 Jun 11 ;15(12):7551-6.

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Continuous-wave operation of photonic band-edge laser near 1.55 microm on silicon wafer.

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