Opt Express. 2006 Sep 4;14(18):8184-8.

GaInAsP/InP membrane BH-DFB lasers directly bonded on SOI substrate.

Maruyama T, Okumura T, Sakamoto S, Miura K, Nishimoto Y, Arai S.

Abstract

A room-temperature continuous-wave operation under optical pumping was demonstrated with GaInAsP/InP membrane buriedheterostructure (BH) distributed-feedback (DFB) laser directly bonded on an SOI substrate. A threshold pump power of 2.8 mW and a sub-mode suppression ratio of 28 dB were obtained with a cavity length of 120 microm and a stripe width of 2 microm.

PMID:: 19529191; [PubMed]

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GaInAsP/InP membrane BH-DFB lasers directly bonded on SOI substrate.
GaInAsP/InP membrane BH-DFB lasers directly bonded on SOI substrate.
Opt Express. 2006 Sep 4 ;14(18):8184-8.

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