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Opt Express. 2009 Apr 27;17(9):7479-90.

Broadband enhancement of light emission in silicon slot waveguides.

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  • 1Geballe Laboratory for Advanced Materials, Stanford University, Stanford, CA 94305, USA.


We investigate the light emission properties of electrical dipole emitters inside 2-dimensional (2D) and 3-dimensional (3D) silicon slot waveguides and evaluate the spontaneous emission enhancement (F(p)) and waveguide coupling ratio (beta). Under realistic conditions, we find that greater than 10-fold enhancement in F(p) can be achieved, together with a beta as large as 0.95. In contrast to the case of high Q optical resonators, such performance enhancements are obtained over a broad wavelength region, which can cover the entire emission spectrum of popular optical dopants such as Er. The enhanced luminescence efficiency and the strong coupling into a limited set of well-defined waveguide modes enables a new class of power-efficient, CMOS-compatible, waveguide-based light sources.

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