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Opt Express. 2009 Apr 27;17(9):7036-42.

Room temperature continuous wave operation of InAs/GaAs quantum dot photonic crystal nanocavity laser on silicon substrate.

Author information

  • 1Institute for Nano Quantum Information Electronics, University of Tokyo, Tokyo, Japan. tanabe@iis.u-tokyo.ac.jp

Abstract

Room temperature, continuous-wave lasing in a quantum dot photonic crystal nanocavity on a Si substrate has been demonstrated by optical pumping. The laser was an air-bridge structure of a two-dimensional photonic crystal GaAs slab with InAs quantum dots inside on a Si substrate fabricated through wafer bonding and layer transfer. This surface-emitting laser exhibited emission at 1.3 microm with a threshold absorbed power of 2 microW, the lowest out of any type of lasers on silicon.

PMID:
19399078
[PubMed - indexed for MEDLINE]
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