Send to:

Choose Destination
See comment in PubMed Commons below
Phys Rev Lett. 2009 Apr 3;102(13):136807. Epub 2009 Apr 1.

Conservation of the lateral electron momentum at a metal-semiconductor interface studied by ballistic electron emission microscopy.

Author information

  • 1Department of Physics, Center for Nanointegration Duisburg-Essen, University of Duisburg-Essen, 47048 Duisburg, Germany.


We report on ballistic electron emission microscopy and spectroscopy studies on epitaxial (3-5 nm thick) Bi(111) films, grown on n-type Si substrates. The effective barrier heights of the Schottky barrier observed are 0.58 eV for the Bi/Si(100)-(2x1) and 0.68 eV for the Bi/Si(111)-(7x7). At the step edges of the epitaxial films a strong increase of the ballistic electron emission microscopy current is observed for Bi/Si(111)-(7x7), while no increase occurs for Bi/Si(100)-(2x1). These observations can be explained by the conservation of the lateral momentum of the electron at the metal-semiconductor interface.

PubMed Commons home

PubMed Commons

How to join PubMed Commons

    Supplemental Content

    Full text links

    Icon for American Physical Society
    Loading ...
    Write to the Help Desk