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Nano Lett. 2008 Dec;8(12):4459-63. doi: 10.1021/nl802406d.

Growth and characterization of wurtzite GaAs nanowires with defect-free zinc blende GaAsSb inserts.

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  • 1Department of Electronics and Telecommunications, Norwegian University of Science and Technology, NO-7491 Trondheim, Norway.

Abstract

We have demonstrated the growth of a unique wurtzite (WZ) GaAs nanowire (NW) with a zinc blende (ZB) GaAsSb insert by Au-assisted molecular beam epitaxy. An abrupt interface from the WZ GaAs phase to the ZB GaAsSb phase was observed, whereas an intermediate segment of a 4H polytype GaAs phase was found directly above the ZB GaAsSb insert. A possible mechanism for the different phase transitions is discussed. Furthermore, low temperature microphotoluminescence (micro-PL) measurements showed evidence of quantum confinement of holes in the GaAsSb insert.

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