Electrical properties of new organic conductor (BEST)(2)InBr(4) [BEST = bis(ethylenediseleno)tetrathiafulvalene] up to 10.8 GPa and antiferromagnetic transition of (BEST)(2)FeBr(4)

Hengbo Cui; James Brooks; David Graf; Yoshinori Okano; Haoling Sun; Hayao Kobayashi

doi:10.1021/ic900220g

Electrical properties of new organic conductor (BEST)(2)InBr(4) [BEST = bis(ethylenediseleno)tetrathiafulvalene] up to 10.8 GPa and antiferromagnetic transition of (BEST)(2)FeBr(4)

Inorg Chem. 2009 May 18;48(10):4268-70. doi: 10.1021/ic900220g.

Authors

Hengbo Cui¹, James Brooks, David Graf, Yoshinori Okano, Haoling Sun, Hayao Kobayashi

Affiliation

¹ National High Magnetic Field Laboratory (NHMFL), Florida State University, Tallahassee, Florida 32310, USA.

PMID: 19323462
DOI: 10.1021/ic900220g

Abstract

A new organic conductor, (BEST)(2)InBr(4), with alternating donor layer arrangement has been synthesized, and the electrical properties have been investigated up to 10.8 GPa. The temperature dependence of the high-pressure resistivity shows a complicated metal-semiconductor transition behavior. The room temperature resistivity decreases with pressure up to 8.6 GPa but increases at higher pressures. The magnetic susceptibility of an isostructural (BEST)(2)FeBr(4) salt shows an antiferromagnetic transition at 4.4 K, which is suppressed with increasing magnetic field.