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J Am Chem Soc. 2009 Feb 25;131(7):2462-3. doi: 10.1021/ja809848y.

High electron mobility in vacuum and ambient for PDIF-CN2 single-crystal transistors.

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  • 1Kavli Institue of Nanoscience, Delft University, Lorentzweg 1, 2628CJ, Delft, The Netherlands. A.S.Molinari@tudelft.nl

Abstract

Single-crystal field-effect transistors (FETs) based on a fluorocarbon-substituted dicyanoperylene-3,4:9,10-bis(dicarboximide) [PDIF-CN(2)] were fabricated by lamination of the semiconductor crystal on Si-SiO(2)/PMMA-Au gate-dielectric-contact substrates. These devices were characterized both in vacuum and in the air, and they exhibit electron mobilities of ca. 6-3 and ca. 3-1 cm(2) V(-1) s(-1), respectively, I(on):I(off) > 10(3), and near-zero threshold voltage.

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