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Nano Lett. 2009 Feb;9(2):897-902. doi: 10.1021/nl803868k.

PlasMOStor: a metal-oxide-Si field effect plasmonic modulator.

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  • 1California Institute of Technology, Pasadena, California 91125, USA.

Abstract

Realization of chip-based all-optical and optoelectronic computational networks will require ultracompact Si-compatible modulators, ideally comprising dimensions, materials, and functionality similar to electronic complementary metal-oxide-semiconductor (CMOS) components. Here we demonstrate such a modulator, based on field-effect modulation of plasmon waveguide modes in a MOS geometry. Near-infrared transmission between an optical source and drain is controlled by a gate voltage that drives the MOS into accumulation. Using the gate oxide as an optical channel, electro-optic modulation is achieved in device volumes of half of a cubic wavelength with femtojoule switching energies and the potential for gigahertz modulation frequencies.

PMID:
19170558
[PubMed]
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