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Nano Lett. 2009 Jan;9(1):215-9. doi: 10.1021/nl8027872.

Stacking-faults-free zinc Blende GaAs nanowires.

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  • 1Braun Center for Submicron Research and Electron Microscopy Unit, Weizmann Institute of Science, Rehovot, Israel. hadas.shtrikman@weizmann.ac.il


Stacking-faults-free zinc blende GaAs nanowires have been grown by molecular beam epitaxy using the vapor-liquid-solid gold assisted growth method. Two different approaches were used to obtain continuous low supersaturation in the vicinity of the growing wires. A double distribution of gold droplets on the (111)B surface in the first case, and a highly terraced (311)B growth surface in the second case both avoided the commonly observed transition to wurtzite structure.

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