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Nano Lett. 2009 Jan;9(1):112-6. doi: 10.1021/nl802636b.

Single GaAs/GaAsP coaxial core-shell nanowire lasers.

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  • 1Research Center for Integrated Quantum Electronics (RCIQE) and Graduate School of Information Science and Technology, Hokkaido University, North 13 West 8, Sapporo 060-8628, Japan.


Highly uniform GaAs/GaAsP coaxial nanowires were prepared via selective-area metal organic vapor phase epitaxy. Photoluminescence spectra from a single nanowire indicate that the obtained heterostructures can produce near-infrared (NIR) lasing under pulsed light excitation. The end facets of a single nanowire form a natural mirror surface to create an axial cavity, which realizes resonance and give stimulated emission. This study is a considerable advance toward the realization of nanowire-based NIR light sources.

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