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Opt Express. 2008 Nov 24;16(24):20081-98.

Femtosecond laser photo-response of Ge23Sb7S70 films.

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  • 1College of Optics/CREOL, University of Central Florida, 4000 Central Florida Blvd., Orlando, FL 32816, USA.


Ternary chalcogenide glass films from identical parent bulk glasses were prepared by thermal evaporation (TE) and pulsed laser deposition (PLD) and subjected to 810-nm femtosecond laser exposure at both kHz and MHz repetition rates. The exposure-induced modification on the glass film's surface profile, refractive index, and structural properties were shown to be a function of laser irradiance, the number of laser pulses per focal spot, and repetition rate. Film response was shown to be related to deposition technique-related density and the number of glass bonds within the irradiated focal volume. The induced changes resulted from a reduction in glass network connectivity among GeS(4/2), GeS(4), S-S and S(3)Ge-S-GeS(3) units.

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