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Nano Lett. 2008 Oct;8(10):3475-80. doi: 10.1021/nl802398j. Epub 2008 Sep 11.

Control of InAs nanowire growth directions on Si.

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  • 1Graduate School of Information Science and Technology, Hokkaido University, North14 West9, 060-0814, Sapporo, Japan. tomioka@rciqe.hokudai.ac.jp

Abstract

We report on control of growth directions of InAs nanowires on Si substrate. We achieved to integrate vertical InAs nanowires on Si by modifying initial Si(111) surface in selective-area metal-organic vapor phase epitaxy with flow-rate modulation mode at low temperature. Cross-sectional transmission electron microscope and Raman scattering showed that misfit dislocation with local strains were accommodated in the interface.

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