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Rev Sci Instrum. 2008 May;79(5):056103. doi: 10.1063/1.2919173.

Setup for in situ deep level transient spectroscopy of semiconductors during swift heavy ion irradiation.

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  • 1Inter-University Accelerator Centre, P.O. Box-10502, New Delhi, Delhi 110 067, India. sandeepiuac@gmail.com

Abstract

A computerized system for in situ deep level characterization during irradiation in semiconductors has been set up and tested in the beam line for materials science studies of the 15 MV Pelletron accelerator at the Inter-University Accelerator Centre, New Delhi. This is a new facility for in situ irradiation-induced deep level studies, available in the beam line of an accelerator laboratory. It is based on the well-known deep level transient spectroscopy (DLTS) technique. High versatility for data manipulation is achieved through multifunction data acquisition card and LABVIEW. In situ DLTS studies of deep levels produced by impact of 100 MeV Si ions on Aun-Si(100) Schottky barrier diode are presented to illustrate performance of the automated DLTS facility in the beam line.

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