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J Nanosci Nanotechnol. 2008 Jan;8(1):99-110.

GaN, ZnO and InN nanowires and devices.

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  • 1Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32611-6400, USA.

Abstract

A brief review is given of recent developments in wide bandgap semiconductor nanowire synthesis and devices fabricated on these nanostructures. There is strong interest in these devices for applications in UV detection, gas sensors and transparent electronics.

PMID:
18468056
[PubMed]
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