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Nano Lett. 2008 Mar;8(3):805-9. doi: 10.1021/nl072676z. Epub 2008 Feb 20.

Spin diode based on Fe/MgO double tunnel junction.

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  • 1Nanostructure Physics, Royal Institute of Technology, 10691 Stockholm, Sweden.


We demonstrate a spin diode consisting of a semiconductor-free nanoscale Fe/MgO-based double tunnel junction. The device exhibits a near perfect spin-valve effect combined with a strong diode effect. The mechanism consistent with our data is resonant tunneling through discrete states in the middle ferromagnetic layer sandwiched by tunnel barriers of different spin-dependent transparency. The observed magnetoresistance is a record high>1000%, essentially making the structure an on/off spin switch. This, combined with the strong diode effect, approximately 100, demonstrates a new device principle, promising for memory and reprogrammable logic applications.

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