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Opt Lett. 2008 Feb 1;33(3):225-7.

Passively mode-locked Nd:LuVO(4) laser with a GaAs wafer.

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  • 1State Key Laboratory of Crystal Materials and Institute of Crystal Materials, Shandong University, Jinan, China.


We report on the passive mode locking of a diode-pumped Nd:LuVO(4) laser with a GaAs wafer as output coupler. Using the interference modulation effect of the GaAs wafer, high-power continuous-wave mode locking with a pulse width of about 7.1 ps and an average output power of 3.11 W was achieved. Our result shows that Nd:LuVO(4) could be an excellent gain medium for diode-pumped high-power mode-locked lasers.

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