Format

Send to:

Choose Destination
See comment in PubMed Commons below
Phys Rev Lett. 2008 Jan 18;100(2):026803. Epub 2008 Jan 16.

Electronic transport in phosphorus-doped silicon nanocrystal networks.

Author information

  • 1Walter Schottky Institut, Technische Universit√§t M√ľnchen, Am Coulombwall 3, 85748 Garching, Germany.

Abstract

We have investigated the role of doping and paramagnetic states on the electronic transport of networks assembled from freestanding Si nanocrystals (Si-NCs). Electrically detected magnetic resonance (EDMR) studies on Si-NCs films, which show a strong increase of conductivity with doping of individual Si-NCs, reveal that P donors and Si dangling bonds contribute to dark conductivity via spin-dependent hopping, whereas in photoconductivity, these states act as spin-dependent recombination centers of photogenerated electrons and holes. Comparison between EDMR and conventional electron paramagnetic resonance shows that different subsets of P-doped nanocrystals contribute to the different transport processes.

PMID:
18232904
[PubMed]
PubMed Commons home

PubMed Commons

0 comments
How to join PubMed Commons

    Supplemental Content

    Full text links

    Icon for American Physical Society
    Loading ...
    Write to the Help Desk