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Nano Lett. 2008 Feb;8(2):760-5. doi: 10.1021/nl0727314. Epub 2008 Jan 19.

Significant enhancement of hole mobility in [110] silicon nanowires compared to electrons and bulk silicon.

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  • 1Nanotechnology Program, University of Waterloo, 200 University Avenue West, Ontario N2T 1P8, Canada. abuin@ecemail.uwaterloo.ca


Utilizing sp3d5s* tight-binding band structure and wave functions for electrons and holes we show that acoustic phonon limited hole mobility in [110] grown silicon nanowires (SiNWs) is greater than electron mobility. The room temperature acoustically limited hole mobility for the SiNWs considered can be as high as 2500 cm2/V s, which is nearly three times larger than the bulk acoustically limited silicon hole mobility. It is also shown that the electron and hole mobility for [110] grown SiNWs exceed those of similar diameter [100] SiNWs, with nearly 2 orders of magnitude difference for hole mobility. Since small diameter SiNWs have been seen to grow primarily along the [110] direction, results strongly suggest that these SiNWs may be useful in future electronics. Our results are also relevant to recent experiments measuring SiNW mobility.

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