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Nano Lett. 2007 Sep;7(9):2596-601. Epub 2007 Aug 28.

Strain and shape of epitaxial InAs/InP nanowire superlattice measured by grazing incidence X-ray techniques.

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  • 1CEA Grenoble, Département de Recherche Fondamentale sur la Matière Condensée, Service des Matériaux et Microstructures, 17 rue des Martyrs, 38054 Grenoble Cedex 9, France. joel.eymery@cea.fr

Abstract

Quantitative structural information about epitaxial arrays of nanowires are reported for a InAs/InP longitudinal heterostructure grown by chemical beam epitaxy on an InAs (111)B substrate. Grazing incidence X-ray diffraction allows the separation of the nanowire contribution from the substrate overgrowth and gives averaged information about crystallographic phases, epitaxial relationships (with orientation distribution), and strain. In-plane strain inhomogeneities, intrinsic to the nanowires geometry, are measured and compared to atomistic simulations. Small-angle X-ray scattering evidences the hexagonal symmetry of the nanowire cross-section and provides a rough estimate of size fluctuations.

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