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Nano Lett. 2007 Sep;7(9):2596-601. Epub 2007 Aug 28.

Strain and shape of epitaxial InAs/InP nanowire superlattice measured by grazing incidence X-ray techniques.

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  • 1CEA Grenoble, Département de Recherche Fondamentale sur la Matière Condensée, Service des Matériaux et Microstructures, 17 rue des Martyrs, 38054 Grenoble Cedex 9, France.


Quantitative structural information about epitaxial arrays of nanowires are reported for a InAs/InP longitudinal heterostructure grown by chemical beam epitaxy on an InAs (111)B substrate. Grazing incidence X-ray diffraction allows the separation of the nanowire contribution from the substrate overgrowth and gives averaged information about crystallographic phases, epitaxial relationships (with orientation distribution), and strain. In-plane strain inhomogeneities, intrinsic to the nanowires geometry, are measured and compared to atomistic simulations. Small-angle X-ray scattering evidences the hexagonal symmetry of the nanowire cross-section and provides a rough estimate of size fluctuations.

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