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Nano Lett. 2007 Aug;7(8):2486-90. Epub 2007 Jul 4.

III-V nanowire growth mechanism: V/III ratio and temperature effects.

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  • 1Department of Electrical and Computer Engineering, University of California-San Diego, La Jolla, California 92093, USA.

Abstract

We have studied the dependence of Au-assisted InAs nanowire (NW) growth on InAs(111)B substrates as a function of substrate temperature and input V/III precursor ratio using organometallic vapor-phase epitaxy. Temperature-dependent growth was observed within certain temperature windows that are highly dependent on input V/III ratios. This dependence was found to be a direct consequence of the drop in NW nucleation and growth rate with increasing V/III ratio at a constant growth temperature due to depletion of indium at the NW growth sites. The growth rate was found to be determined by the local V/III ratio, which is dependent on the input precursor flow rates, growth temperature, and substrate decomposition. These studies advance understanding of the key processes involved in III-V NW growth, support the general validity of the vapor-liquid-solid growth mechanism for III-V NWs, and improve rational control over their growth morphology.

PMID:
17608541
[PubMed - indexed for MEDLINE]
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