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    Nano Lett. 2007 Aug;7(8):2291-4. Epub 2007 Jun 30.

    A carbon nanotube field effect transistor with a suspended nanotube gate.

    Source

    Department of Applied Physics, Chalmers University of Technology, SE-412 96 Gothenburg, Sweden. tarakano@chalmers.se

    Abstract

    We investigate theoretically field effect transistors based on single-walled carbon nanotubes (CNTFET) and explore two device geometries with suspended multiwalled carbon nanotubes (MWNT) functioning as gate electrodes. In the two geometries, a doubly or singly clamped MWNT is electrostatically deflected toward the transistor channel, allowing for a variable gate coupling and leading to, for instance, a superior subthreshold slope. We suggest that the proposed designs can be used as nanoelectromechanical switches and as detectors of mechanical motion on the nanoscale.

    PMID:
    17604404
    [PubMed - indexed for MEDLINE]

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