Nucleation and growth of GaN nanowires on Si(111) performed by molecular beam epitaxy

Nano Lett. 2007 Aug;7(8):2248-51. doi: 10.1021/nl0707398. Epub 2007 Jun 29.

Abstract

GaN nanowires (NWs) have been grown on Si(111) substrates by plasma-assisted molecular beam epitaxy (PAMBE). The nucleation process of GaN-NWs has been investigated in terms of nucleation density and wire evolution with time for a given set of growth parameters. The wire density increases rapidly with time and then saturates. The growth period until the nucleation of new nanowires is terminated can be defined as the nucleation stage. Coalescence of closely spaced nanowires reduces the density for long deposition times. The average size of the well-nucleated NWs shows linear time dependence in the nucleation stage. High-resolution transmission electron microscopy measurements of alternating GaN and AlN layers give valuable information about the length and radial growth rates for GaN and AlN in NWs.

Publication types

  • Research Support, Non-U.S. Gov't
  • Research Support, U.S. Gov't, Non-P.H.S.

MeSH terms

  • Crystallization / methods*
  • Gallium / chemistry*
  • Heavy Ions*
  • Macromolecular Substances / chemistry
  • Materials Testing
  • Molecular Conformation
  • Nanotechnology / methods*
  • Nanotubes / chemistry*
  • Nanotubes / ultrastructure*
  • Particle Size
  • Silicon / chemistry*
  • Surface Properties

Substances

  • Macromolecular Substances
  • gallium nitride
  • Gallium
  • Silicon