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Phys Rev Lett. 2007 Jan 12;98(2):026101. Epub 2007 Jan 8.

Bonding at the SiC-SiO2 interface and the effects of nitrogen and hydrogen.

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  • 1Department of Physics and Engineering Physics, University of Tulsa, Tulsa, Oklahoma 74104, USA.

Abstract

Unlike the Si-SiO2 interface, the SiC-SiO2 interface has large defect densities. Though nitridation has been shown to reduce the defect density, the effect of H remains an open issue. Here we combine experimental data and the results of first-principles calculations to demonstrate that a Si-C-O bonded interlayer with correlated threefold-coordinated C atoms accounts for the observed defect states, for passivation by N and atomic H, and for the nature of residual defects.

PMID:
17358620
[PubMed]
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