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Langmuir. 2006 Nov 7;22(23):9718-22.

N3-sensitized TiO2 films: in situ proton exchange toward open-circuit photovoltage enhancement.

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  • 1National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Higashi, Tsukuba, Ibaraki 305-8565, Japan. zs.wang@aist.go.jp

Abstract

Protons of N3, cis-bis(thiocyanato)bis(2,2'-bipyridyl-4,4'-dicarboxylic acid)ruthenium(II), were in situ exchanged on N3-loaded TiO2 films with alkali-metal, tetrabutylammonium, and guanidinium cations. This simple strategy improved the open-circuit photovoltage (V(oc)) significantly, resulting in enhancement of the power conversion efficiency by 10-25%. Electrochemical impedance spectra revealed that the in situ proton exchange of the N3-loaded film suppressed charge recombination between injected electrons and I(3-) ions in the electrolyte, which, together with the negative shift of the conduction band edge for TiO2, may account for the remarkably increased V(oc) upon proton exchange of N3.

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