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Nano Lett. 2006 Aug;6(8):1719-22.

Broadband ZnO single-nanowire light-emitting diode.

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  • 1Division of Engineering and Applied Sciences, Harvard University, Cambridge, Massachusetts 02138, USA.

Abstract

We present a novel technique for reliable electrical injection into single semiconductor nanowires for light-emitting diodes and lasers. The method makes use of a high-resolution negative electron-beam resist and direct electron-beam patterning for the precise fabrication of a metallic top contact along the length of the nanowire, while a planar substrate is used as a bottom contact. It can be applied to any nanowire structure with an arbitrary cross section. We demonstrate this technique by constructing the first zinc oxide single-nanowire light-emitting diode. The device exhibits broad sub-bandgap emission at room temperature.

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